The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1992
Filed:
Jul. 30, 1990
Applicant:
Inventor:
Hideaki Matsuhashi, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437192 ; 437173 ; 437225 ; 427 531 ; 427 541 ;
Abstract
In a method of depositing a tungsten film on a gate oxide by means of laser CVD, using WF.sub.6 and H.sub.2 as raw material gases, the H.sub.2 /WF.sub.6 flow ratio lies within the range 10-100, and the volumeric flow rate of the WF.sub.6, which is defined as the ratio of the flow rate of WF.sub.6 to the total pressure, lies within the range 0.04-0.01 sccm/Pa, so that the supply of WF.sub.6 determines the deposition rate of the W film, whereby a low stress W film is obtained. Accordingly, peeling of the W film at the interface with the SiO.sub.2 film and cracks can be avoided.