The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1992
Filed:
Aug. 23, 1990
Applicant:
Inventor:
Chen-Hsi Lin, Cupertino, CA (US);
Assignee:
Hewlett Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156656 ;
Abstract
A method of plasma etching tungsten containing films such as is found in semiconductor interconnects. The etch method is conducted under reactive ion etch conditions in a plasma etch reactor using a gas mixture of CF.sub.4 and O.sub.2. The O.sub.2 preferably makes up 20% to 60% of the gas mixture by volume. The etch method is highly selective to titanium disilicide, titanium nitride and silicon dioxide.
Lin, Chen-Hsi. (1992). Selective etching method for tungsten and tungsten alloys (U.S. Patent No. 5108542). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5108542
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile