The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Nov. 20, 1990
Applicant:
Inventor:
Kanetake Takasaki, Tokyo, JP;
Assignee:
Fujitsu Ltd., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 16 ; 357 17 ; 357 22 ; 372 43 ;
Abstract
A semiconductor device comprises a crystalline substrate with a silicon surface, a first buffer layer of GaAs or GaAs-containing compound formed on the Si surfaces and a second buffer layer of a Ge or Ge-containing crystalline layer formed as an intervening layer between the first layer and a compound semiconductor layer.
Takasaki, Kanetake. (1992). Semiconductor device with first and second buffer layers (U.S. Patent No. 5107317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5107317
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile