The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Mar. 15, 1991
Dawon Kahng, Princeton, NJ (US);
James D Chadi, Princeton, NJ (US);
NEC Research Institute, Princeton, NJ (US);
Abstract
A complementary MISFET uses gallium antimonide as the active material to utilize the high mobilities of both holes and electrons in such material. To avoid interfacial states at the gate interface, the gate insulator is an epitaxial composite layer formed by an appropriate superlattice of which the portion adjacent the channel region is free of intentional doping. The superlattice may comprise, for example, alternating layers of aluminum antimonide and aluminum arsenide or of aluminum antimonide and gallium arsenide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile