The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Oct. 29, 1990
Kazuo Yano, Nino, JP;
Mitsuru Hiraki, Hachioji, JP;
Hisayuki Higuchi, Kokubunji, JP;
Suguru Tachibana, Hachioji, JP;
Makoto Suzuki, Niiza, JP;
Katsuhiro Shimohigashi, Musashimurayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An output circuit portion of a BiCMOS logic circuit adapted to operating on a low voltage has an npn transistor Q5 connected between the power source Vcc and an output N6, and has an npn transistor Q6 connected between the output N6 and ground potential GND. The base of the npn transistor Q5 is driven by the drain output of p-channel MOSFETs MP3, MP4, and the base of the npn transistor Q6 is driven by the drain output of p-channel MOSFET QP5. When the power source voltage Vcc drops, the voltage applied between the drain and the source of MOSFET MP5 becomes small by the effect of V.sub.BE of the transistor Q6, but the drain current of the MOSFET MP5 changes little. Therefore, the BiCMOS circuit operates at high speeds (see FIG. 1) even when the power source voltage drops.