The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Feb. 05, 1991
Michael Borden, Brookfield, CT (US);
Keith Daniell, East Norwalk, CT (US);
Matthew Magida, Monroe, CT (US);
Charles Zarowin, Rowayton, CT (US);
The Perkin Elmer Corporation, Norwalk, CT (US);
Abstract
A process is described for the formation of high temperature superconducting materials from perovskites by inductively coupled plasma assisted oxidation. An inductively coupled plasma reactor is used to oxidize oxygen deficient perovskites in less time and at lower temperatures than previously possible. High power densities are created within the plasma reactor. This is thought to contribute to the rapid and low temperature phase change during oxidation from tetragonal to orthorhombic crystal structure apparently required for superconductivity at temperatures greater than approximately 77.degree. K. The low temperature and rapid processing time permits the application of conventional lithographic semiconductor manufacturing techniques to be applied to the potentially high temperature superconducting perovskite materials.