The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Sep. 10, 1990
Applicant:
Inventors:
Norio Homma, Tokyo, JP;
Hiromi Takahashi, Tokyo, JP;
Shinji Kawamoto, Tokyo, JP;
Hideyuki Kondo, Tokyo, JP;
Tadataka Horishita, Tokyo, JP;
Assignees:
International Superconductivity Technology Center, all of, JP;
OKI Electric Industry Co., Ltd., all of, JP;
The Hokkaido Electric Power Company Inc., all of, JP;
The Chugoku Electric Power Co., Inc., all of, JP;
Mitsubishi Metal Corporation, all of, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ;
U.S. Cl.
CPC ...
505-1 ; 20419224 ; 505731 ;
Abstract
A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is higher than 13.56 MHz and provides a lower negative target self-bias voltage permitting improved film formation.