The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Apr. 12, 1989
Takao Kawamura, Sakai-shi, Osaka-fu, JP;
Naooki Miyamoto, Yohkaichi, JP;
Hitoshi Takemura, Yohkaichi, JP;
Satoru Watanabe, Yohkaichi, JP;
Kokichi Ishibitsu, Yohkaichi, JP;
Kyocera Corporation, Kyoto, JP;
Other;
Abstract
The present invention relates to an electrophotographic sensitive member comprising a photoconductive amorphous silicon carbide layer. An amorphous silicon layer has superior abrasion resistance, heat resistance, antipollution property, photosensitive characteristic and the like. However, an amorphous silicon layer itself has a low dark resistance, so that dopants, such as boron, are added thereto but a dark resistance of 10.sup.12 .OMEGA..multidot.cm or more required for the case where it is used as an electrophotographic sensitive member has never been obtained. The present inventors have found before that an amorphous silicon carbide layer has a large carrier-mobility and photoconductivity and its dark resistance of 10.sup.13 .OMEGA..multidot.cm or more can be easily obtained regardless of the existence of dopants and furthermore an electrophotographic sensitive member, which can be positively and negatively charged by the selection of the dopants, can be obtained. The present invention provides an electrophotographic sensitive member capable of improving the photosensitive characteristics and the like to improve electrophotographic characteristics, as desired, with an a-SiC layer as a substantial photoconductive layer and substantially without requiring a surface protective layer and a barrier layer.