The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1992
Filed:
Apr. 02, 1990
Applicant:
Inventors:
Jeffrey L Galvin, Mesa, AZ (US);
Frederick J Robinson, Scottsdale, AZ (US);
David M Yee, Phoenix, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
20419235 ; 156643 ; 156656 ; 156665 ; 20419232 ;
Abstract
A dry etch process allows fabrication of very small SAW electrodes (less than 1 micron wide) on LiNbO.sub.3 (lithium niobate) or quartz substrates. In the process, analuminum (Al) layer is disposed on the substrate, and a photoresist layer is applied and exposed in the appropriate pattern. The wafer is then placed in an RIE where the Al is dry etched using a plasma containing chlorine and fluorine. The photoresist is then removed by an oxygen plasma. The oxygen also operates to replace the chlorine ions. By using this process, very precisely shaped electrodes can be formed.