The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1992
Filed:
Aug. 09, 1991
Martinus P Bierhoff, Eindhoven, NL;
Job F van Mil, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
The invention relates to a semiconductor device comprising a radiation-sensitive element (A . . . D). The radiation-sensitive element includes a transistor (T) having an emitter region (6), a base region (4) and a collector region (2), and further a radiation-sensitive region (7) having a rectifying junction (5). Due to the presence of the transistor (T), such an element (A . . . D) can supply a considerably larger output signal than a photodiode. On the contrary, however, the first-mentioned element (A . . . D) is comparatively slow as compared with a photodiode due to the parasitic capacitance of the rectifying junction (5). The invention obviates this disadvantage in that according to the invention the radiation-sensitive region (7) has at least a first subregion (71) and a second subregion (72) and the transistor (T) is subdivided into two subtransistors (T.sub.1, T.sub.2), whose base regions (4) are separately connected to the subregions (71, 72). The collector regions (2) and the emitter regions (6) of the subtransistors (T.sub.1, T.sub.2) are interconnected.