The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 1992

Filed:

Jun. 11, 1991
Applicant:
Inventor:

Friedhelm Bauer, Wurenlingen, CH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 234 ; 357 38 ; 357 39 ; 357 40 ; 357 43 ;
Abstract

In a MOS-controlled thyristor MCT, the second base layer (16) is pulled to the cathode-side surface of the semiconductor substrate (1) between the MCT until cells. At this point, a collector zone (20), which is doped oppositely to the second base layer (16) is arranged which is connected to the cathode contact (2) and reaches into the second base layer (16). Together with the second base layer (16) and an additional opposite anode short circuit, the collector zone (20) forms an inverse diode structure (11) which saves an external free-wheeling diode when inductive loads are switched.


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