The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1992
Filed:
Jun. 06, 1990
Anton C Greenwald, North Andover, MA (US);
Spire Corporation, Bedford, MA (US);
Abstract
A stream of gaseous source compounds and their ranges of relative ratios useful in the deposition of thin film ferroelectric materials by CVD are disclosed. The stream of gaseous source compounds are used in combination with a CVD reactor flushed with an inert gas and maintained at a predetermined internal pressure and, a substrate disposed within the CVD reactor and maintained at a predetermined temperature. The steam of gaseous source compounds include a Zr source compound, a Ti source compound, a Pb source compound, an oxidizing agent compound, and an inert gas, as well as their ranges of relative ratios to deposit lead-zirconate-titanate, related ferroelectrics, specifically including lead-lanthanum-zirconium-titanate.