The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 1992

Filed:

Jun. 29, 1988
Applicant:
Inventors:

Phillip E Thompson, Springfield, VA (US);

Nicolas A Papanicolaou, Silver Spring, MD (US);

J Bradley Boos, Springfield, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 22 ; 357 2312 ; 2502 / ;
Abstract

A photoconductive semiconductor device having a source, a drain, and a photosensitive channel therebetween. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide.


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