The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1992
Filed:
Nov. 27, 1989
Applicant:
Inventors:
Assignees:
Mitsubishi Monsanto Chemical Company, Tokyo, JP;
Mitsubishi Kasei Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 372 45 ; 372 46 ; 372 43 ;
Abstract
A double hetero type epitaxial wafer contains a single crystal substrate, first and second conductivity type clad layers which are opposite and are made of mixed crystal compounds of Group III-V which had an indirect transition type band structure, and an active layer made of a mixed crystal compound of Group III-V which has a direct transition type band structure and is interposed between the respective clad layers, wherein the first conductivity type clad layer has a refractive index smaller than that of the second conductivity type clad layer.