The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 1992

Filed:

Feb. 01, 1991
Applicant:
Inventor:

Nobuhiro Kuwata, Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 89 ; 437 93 ; 437126 ; 437133 ; 437 45 ; 148D / ;
Abstract

A semiconductor device comprising a plurality of elemental active devices being operable with different threshold voltages is disclosed. Each of the elemental active devices, e.g. D made and E made HEMT, is formed of each of different active layers epitaxially grown on each of different regions of a semiconductor substrate. Since the different regions have different surface orientations or surface areas, each of the different active layers have different carrier densities corresponding to the surface orientation or the surface areas.


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Kuwata, Nobuhiro. (1992). Method for fabricating semiconductor device (U.S. Patent No. 5100831). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5100831

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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