The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1992
Filed:
Feb. 16, 1990
Applicant:
Inventor:
Shigeru Morita, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 64 ; 437 69 ; 437 70 ; 437 89 ; 437 90 ;
Abstract
In a method for manufacturing a semiconductor device using a LOCOS technique, a selective oxidation is performed using an oxidation-resistance film as a mask to form an element isolating oxide film on the semiconductor substrate. An inserting portion of the oxide film is formed under an end portion of the oxidation-resistance film. The feature of this method lies in that the inserting portion of the oxide film is left as an element isolating oxide film and the other portion thereof is removed to selectively expose the substrate, and then a monocrystalline silicon layer is formed on the exposed portion of the substrate and used as an element region.