The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 1992

Filed:

Aug. 15, 1990
Applicant:
Inventor:

Gregory S Glenn, Los Angeles, CA (US);

Assignee:

Spectrolab, Inc., Sylmar, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437-2 ; 136244 ; 136256 ;
Abstract

A pattern of current collection gridlines (24) is formed on a surface (20) of a photovoltaic wafer (12). An ohmic contact strip (28) is formed adjacent to an edge (12c) of the wafer (12) in electrical interconnection with the gridlines (24). Interconnect tabs (30) are integrally formed with the gridlines (24) and contact strip (28), extending away from the contact strip (28) external of the edge (12c) for series or parallel interconnection with other solar cells. The interconnect tabs (30) may have a stress reflief configuration, including a non-planar bend or loop. The wafer (12) initially has a first portion (12a) and a second portion (12b). A barrier layer (50) of photoresist or the like is formed on the second portion (12b). The grid (24) and contact strip (28) are formed on the first portion (12a) simultaneously with forming the interconnect tabs (30) over the barrier layer (50 ) on the second portion (12b) using photolithography and metal deposition. The barrier layer (50) is dissolved away, and the second portion (12b) is broken away from the first portion (12a), leaving the interconnect tabs (30) extending from the contact strip (28) external of the remaining first portion (12a) of the wafer (12).


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