The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1992
Filed:
Jan. 22, 1990
Applicant:
Inventor:
Masamichi Ogawa, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 16 ; 357 22 ;
Abstract
A compound semiconductor device having a channel layer and an electron supply layer and using a two-dimensional electron gas. The channel layer near the interface between the channel layer and the electron supply layer is formed as a graded layer. It is possible to realize a compound semiconductor device which has good characteristics and which can be easily fabricated.
Ogawa, Masamichi. (1992). Compound semiconductor device which utilizes an electron supply layer (U.S. Patent No. 5099295). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5099295
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile