The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1992
Filed:
Jan. 08, 1991
Applicant:
Inventor:
Scott C Blackstone, Mesa, AZ (US);
Assignee:
Unitrode Corporation, Billerica, MA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437 61 ; 437974 ; 437154 ; 748D / ; 748D / ; 148 333 ; 148 334 ;
Abstract
A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar semiconductor processing techniques to achieve a complementary semiconductor structure in which a plurality of matched semiconductor elements can be formed. An embedded silicide layer in the bonded semiconductor substrate acts as a conduit for horizontally dispersing dopant during the diffusion process. The dopant subsequently up-diffuses into an adjacent silicon region forming generally uniform and shallow, buried layer regions.