The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1992
Filed:
Oct. 03, 1988
Applicant:
Inventors:
Thomas N Jackson, Peekskill, NY (US);
Masanori Murakami, Goldens Bridge, NY (US);
William H Price, East Rockaway, NY (US);
Sandip Tiwari, Ossining, NY (US);
Jerry M Woodall, Bedford Hills, NY (US);
Steven L Wright, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437184 ; 437189 ; 437190 ; 437202 ; 437247 ; 357 67 ; 357 71 ;
Abstract
The control of barriers to carrier flow in a contact between a metal and a higher band gap semiconductor employing an intermediate lower band gap semiconductor with doping and greater than 1.5% lattice mismatch. A WSi metal contact of doped InAs on GaAs of 7.times.10.sup.-6 ohm/cm.sup.2 is provided.