The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1992
Filed:
Aug. 24, 1990
Applicant:
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Noriya Ishida, Atsugi, JP;
Mitsunori Sakama, Hiratsuka, JP;
Mari Sasaki, Atsugi, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437205 ; 437207 ; 437925 ; 118728 ; 20419225 ;
Abstract
An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed in moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out by plasma CVD. Particularly, an AC voltage is applied to the IC chip during deposition for the purpose of obtaining an excellent property of the silicon nitride coating.