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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5096844 B1

PDFFull Text
Date of Patent:
Mar. 17, 1992

Filed:

Aug. 24, 1989

Method for manufacturing bipolar transistor by selective epitaxial

Applicant:
Inventors:

Ulf Konig, Ulm, DE;

Klaus Worner, Leingarten, DE;

Erich Kasper, Pfaffenhofen, DE;

Assignees:

Licentia Patent-Verwaltungs-GmbH, Frankfurt, DE;

Telefunken electonic GmbH, Heilbronn, DE;

Attorney:

Spencer & Frank

Primary Examiner:

Olik Chaudhuri

Assistant Examiner:

Durmazd Ojan

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 33 ; 437 89 ; 437 99 ; 437188 ; 437196 ; 357 34 ;
Abstract

The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.

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Konig, Ulf. (1992). Method for manufacturing bipolar transistor by selective epitaxial (U.S. Patent No. 5096844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5096844

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