The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 1992

Filed:

Jul. 30, 1991
Applicant:
Inventors:

Makoto Noda, Yokohama, JP;

Kazuhiro Suda, Saitama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 45 ; 357 41 ; 357 68 ;
Abstract

A semiconductor integrated circuit device of a standard cell system of this invention includes a cell array constituted by linearly arranging a plurality of cells each having a predetermined unit logical function. A Vcc power supply line and a GND power supply line are formed of a first aluminum layer, to supply a power supply voltage to the cells in the cell arrays. Power supply buses formed of a second aluminum layer are arranged on both the ends of the Vcc power supply line and the GND power supply line through a via hole, in a direction perpendicular to the Vcc power supply line and the GND power supply line. A Vcc power supply line and a GND power supply line formed of a third aluminum layer are arranged on the Vcc power supply line and the GND power supply line, at a central portion of the cell array, through a via hole, and extend in the same direction as the Vcc power supply lines and the GND power supply line, both mode of the first aluminum layer. Two systems of GND power supply lines allow a decrease in current density.


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