The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1992
Filed:
Jan. 02, 1991
Masafumi Kimata, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An infrared image sensor includes a plurality of Schottky type infrared detecting elements (8) arranged in array formed on one main surface of a semiconductor substrate (1a) or in a vicinity of the one main surface to allow incident infrared rays from the other main surface of the semiconductor substrate (1a). In this infrared image sensor (1), a high concentration impurity layer (12) is provided between one main surface and the other main surface of the semiconductor substrate (1a), which layer being provided with an infrared ray transparent aperture for the corresponding predetermined unit of the grouped infrared detecting elements (8). According to the infrared image sensor (1), by making the aperture of the high concentration impurity layer (12) into a predetermined configuration at a predetermined position determined by the positional relation between an optical system irradiated by the infrared rays and each detecting element, it is possible to allow only the infrared rays in the desired field to irradiate each infrared detecting element (8) and prevent undesired incident light, thereby improving the efficiency in removing the undesired light and reducing noise.