The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1992
Filed:
Dec. 04, 1990
Peter Voss, Munich, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
To avoid punch-through breakdown in conventional thyristors in off-state condition, the central zone (1) must be made so thick that at nominal off-state voltage a sufficient distance remains between the space charge region and the opposite pn junction. Contact regions are provided in the invention for drawing off the charge carriers produced during an off-state load condition. These contacts are disposed on the anode and cathode side at the central zone in the vicinity of the anode-side emitter zone (2) and the cathode-side base zone (3). As a result, the space charge region is allowed to be moved closer to the pn junction without the occurrence of a punch-through breakdown.