The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 1992

Filed:

Feb. 01, 1991
Applicant:
Inventors:

Joseph C Andreshak, Mahopac, NY (US);

Robert J Baseman, Brewster, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437173 ; 437203 ; 437228 ; 148D / ; 156643 ; 156664 ; 156666 ; 427 531 ;
Abstract

A laser ablation damascene process for the planarizing of metal/polymer structures. More specifically, the process is especially adapted for the fabrication of both interlevel via metallization and circuitization layers in integrated circuit (IC) interconnects. Subsequent to the forming or etching of holes or depressions in a polymer insulating layer, a metal layer or film is deposited thereon for the purpose of fabricating vias or trenches for metallization and circulation layers in IC connects. Thereafter, the surface of the metal layer which has been deposited or superimposed on the polymer substrate through any suitable method known in the art is irradiated with at least one laser pulse which will cause the metal layer to melt and reflow and resultingly fill the vias and trenches etched in the polymer substrate while simultaneously ablating and removing the metal from the planarized surface of the substrate in the regions about the vias and trenches.


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