The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1992
Filed:
Jan. 02, 1991
Yasutaka Kohno, Itami, JP;
Abstract
A semiconductor device, such as a MESFET having a self-aligned gate, and a method for production thereof. A triple layer film is formed on the semiconductor substrate, then anisotropically etched to produce a gate structure which is used as a mask in an ion implantation step for forming a source and drain. The triple layer film includes a lower high melting point metal silicide, an upper similar metal silicide and an intermediate high melting point metal layer. The first layer forms a Schottky barrier with the semiconductor substrate and serves as a metal silicide gate. The upper layer serves as a dummy gate. The intermediate metal layer serves to protect the metal silicide layers during the etching step, serves as an etchant stop during removal of the dummy gate, and also serves to protect the Schottky barrier after the device is completed. After removal of the dummy gate, a low resistance metal such as gold is self-alignedly deposited in its place and serves to improve the high frequency performance of the device.