The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 1992

Filed:

Mar. 20, 1990
Applicant:
Inventors:

Kazuhiko Hashimoto, Moriguchi, JP;

Kenji Kawakita, Neyagawa, JP;

Noboru Nomura, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ; G03C / ;
U.S. Cl.
CPC ...
430296 ; 430313 ; 430323 ; 430330 ; 430317 ; 430967 ; 430270 ;
Abstract

A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group, a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.


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