The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1992
Filed:
Jun. 27, 1990
Yoshio Morita, Osaka, JP;
Abstract
Light-emitting semiconductor devices comprising a substrate and a p-n junction structure formed on the substrate are described. The p-n junction structure is made of a combination of a wide gap semiconductor layer made of a p-type chalcopyrite semiconductor of the formula, (Cu.sub.a Ag.sub.1-a)(Al.sub.b Ga.sub.1-b)(Se or S).sub.2 wherein 0.ltoreq.a.ltoreq.1 and 0.ltoreq.b.ltoreq.1, and an n-type II-VI semiconductor of the formula, (Zn.sub.c Cd.sub.1-c)(S.sub.d Se.sub.1-d or Se.sub.d Te.sub.1-d) wherein 0.ltoreq.c.ltoreq.1 and 0.ltoreq.d.ltoreq.1. By this, light-emitting diodes are obtained. When an active layer is provided between the n and p-type layers, semiconductor laser devices are obtained. These devices are capable of emitting blue light to UV light.