The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1992
Filed:
Dec. 28, 1990
Bertrand F Cambou, Mesa, AZ (US);
Juergen Foerstner, Mesa, AZ (US);
H Ming Liaw, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A dielectric isolated area is formed by bonding a first and a second wafer. A first wafer having a first and a second major surface is provided. A second wafer having a first and a second major surface is then provided. Trenches are formed in the first surface of the second wafer. Subsequently, a dielectric layer which can be planarized is formed on the surface of the second wafer having trenches formed therein. The first and second wafers are then bonded so that the dielectric layer and the first surface of the first wafer are bonded to each other. A portion of the second surface of the second wafer is then removed down to at least the bottom of each trench.