The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1992
Filed:
Jun. 07, 1989
James A Meyer, Campbell, CA (US);
Frank Mikalauskas, San Jose, CA (US);
Howard L Parks, Los Gatos, CA (US);
Amdahl Corporation, Sunnyvale, CA (US);
Abstract
A multilayer pressure stack (microstack) has a plurality of layers formed of a material that may have a high time-dependent deformation factor and a plurality of segments formed in each layer. Each segment comprises a conductive material having a low time-dependent deformation factor and pressure is provided along a column of aligned segments to establish electrical interconnections between the segments in various layers. Interposers formed of non-conductive material may be provided in selected segments to form points of electrical isolation. The plurality of layers, or wafers, includes signal wafers and ground/voltage wafers. The signal wafers are formed of a low dielectric constant material to optimize the propagation velocity of signals traveling in signal traces connecting selected segments in the signal wafer. More than 100 wafers may be provided in a microstack and repairs and revisions of conductor routing are easily accomplished by substituting new wafers within the microstack.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile