The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1992
Filed:
Jun. 07, 1990
Applicant:
Inventor:
Michel Haond, Meylan, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-4 ; 357 59 ;
Abstract
An SOI MOS transistor comprises at least a highly doped lateral stripe (13, 14) of the same conductivity type as the substrate (3). This stripe extends along the edge of the substrate and of the source region (5) and is shorted with the source region through the conductive source layer (11).
Quick Actions:
Haond, Michel. (1992). Soi mos transistor with a substrate-source connection (U.S. Patent No. 5089870). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5089870
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