The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 1992

Filed:

Sep. 25, 1990
Applicant:
Inventors:

Yoshio Kamei, Saitama, JP;

Minami Takeuchi, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307270 ; 307570 ; 3072963 ;
Abstract

A drive circuit for a voltage-controlled type semiconductor device is provided which comprises ON gate drive circuit for supplying an ON control signal to a control electrode of the semiconductor device which performs a current switching, OFF gate drive circuit for supplying an OFF control signal to the control electrode of the semiconductor device, high voltage power source, connected to at least one of the ON gate drive circuit and OFF gate drive circuit, for supplying a control current of a predetermined current increase rate to the control electrode of the semiconductor device through at least one of the ON gate drive circuit and OFF gate drive circuit, low voltage power source, provided in juxtaposition with the high voltage power source, for supplying, to the control electrode, enough control current to hold the semiconductor device in a normal state, and switch for supplying an output of the high voltage power source to the control electrode in an earlier portion of a turn ON or a turn OFF period, and an output of the low voltage power source to the control electrode in a normally ON or a normally OFF state.


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