logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5087587 B1

PDFFull Text
Date of Patent:
Feb. 11, 1992

Filed:

Feb. 09, 1987

Epitaxial growth process for the production of a window semiconductor

Applicant:
Inventors:

Taiji Morimoto, Nara, JP;

Shigeki Maei, Tenri, JP;

Hiroshi Hayashi, Kyoto, JP;

Saburo Yamamoto, Nara, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka, JP;

Attorney:

Morrison & Foerster

Primary Examiner:

Robert Kunemund

Assistant Examiner:

William Bunch

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437129 ; 148D / ; 437133 ; 437970 ;
Abstract

A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions.

Find Patent Forward Citations

Morimoto, Taiji. (1992). Epitaxial growth process for the production of a window semiconductor (U.S. Patent No. 5087587). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5087587

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…