The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1992
Filed:
Aug. 21, 1989
Applicant:
Inventors:
Assignee:
Inmos Limited, Bristol, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437 40 ; 437 44 ; 437 57 ; 437 60 ;
Abstract
A method of fabricating a MOSFET wherein sidewall spacers are provided adjacent the gate of the MOSFET, the method including the steps of providing an insulating layer which extends over the source, drain and gate of the MOSFET and which acts as an impurity diffusion barrier; and forming on the insulating layer sidewall spacers which are composed of an insulating material.