The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1992
Filed:
Oct. 11, 1989
Kazuo Endo, Yokohama, JP;
Takashi Kimura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device comprises a first electrode provided on a semiconductor substrate, and constituting a lower wiring layer, an insulating layer provided on the first electrode and the substrate, and a second electrode, which constitutes an upper wiring layer and is connected to the first electrode through a contact hole pierced through the insulating layer. The first electrode includes at least one of high melting point metal layer and high melting point metal silicide layer. The surface of the insulating layer is flattened by heat treatment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile