The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1992
Filed:
Sep. 18, 1990
Applicant:
Inventors:
Koichi Miyata, Raleigh, NC (US);
Kazuo Kumagai, Kobe, JP;
Koji Kobashi, Nishinomiya, JP;
Yuichi Matsui, Kobe, JP;
Akimitsu Nakaue, Kobe, JP;
Assignee:
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437103 ; 437175 ; 437179 ; 437904 ; 4272481 ; 427249 ; 4272552 ; 148D / ;
Abstract
A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.