The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1992
Filed:
May. 30, 1991
Hitoshi Iwata, Aichi, JP;
Yasuo Imaeda, Aichi, JP;
Koichi Jinkai, Aichi, JP;
Kenichi Kinoshita, Aichi, JP;
Kabushiki Kaisha Tokai Rika Denki Seisakusho, Aichi, JP;
Abstract
A bipolar transistor of a multi-emitter construction comprises a base diffusion layer formed in a substrate, a number of emitter diffusion layers formed in the base diffusion layer and arranged in a two-dimensional pattern, a base electrode film formed on the base diffusion layer, the base electrode film having a branch connection portion of a mesh-like shape surrounding each group consisting of at least one of the emitter diffusion layers, the base electrode film also having a main connection portion connected to said branch connection portion, and emitter electrode films formed respectively on said emitter electrode layers.