The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1992
Filed:
Mar. 16, 1988
Applicant:
Inventors:
Yoshihiro Hori, Yokosuka, JP;
Keiichiro Doi, Yokohama, JP;
Manabu Endo, Yokohama, JP;
Toshiki Yoshida, Yokohama, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 41 ; 357 47 ; 357 52 ;
Abstract
In a field effect transistor (JFET) having a compound semiconducting substrate, a buffer layer having a guard-ring, an active layer, source regions, drain regions, and gate regions, the guard-ring is separated from the active layer whereby gate junction capacitance and gate leakage current are lowered without raising a gate resistance value. As a result, noise characteristics and high frequency characteristics can be improved.