The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1992
Filed:
Jun. 26, 1990
Applicant:
Inventors:
Edward A Beam, III, Dallas, TX (US);
Yung-Chung Kao, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 80 ; 437 89 ; 437 90 ; 437 99 ; 437944 ; 437947 ; 148 334 ; 148D / ; 148D / ;
Abstract
Shadow masking layer (130) is undercut during etch of sidewall layer (120) thus preventing sidewall growth during growth of heteroepitaxial region (140), resulting in a planar structure with a high integrity of crystal in the grown region (140).
Beam, III, Edward. (1992). Method for patterned heteroepitaxial growth (U.S. Patent No. 5084409). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5084409
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile