The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 1992
Filed:
Feb. 26, 1990
Yutaka Hayashi, Ibaraki, JP;
Masaaki Sato, Sagamihara, JP;
Yuji Muramatsu, Machida, JP;
Hirofumi Yoshihara, Hamuramachi, JP;
Teiji Hasegawa, Kawasaki, JP;
Agency of Industrial Science & Technology, Ministry of International, , US;
Sankosha Corporation, Tokyo, JP;
Mitaka Denshi Kagaku Laboratory Inc., Tokyo, JP;
Abstract
A surge absorption device includes fundamentally a first semiconductor region, a second semiconductor region forming a pn junction between itself and the first region, a third region determining the effective thickness of the second region, and a fourth region provided in contact with the first region and forming an injection junction for causing first minority carriers of a kind the same as that of minority carriers in the first region to be injected into the first region. When a depletion layer formed by application of reverse bias across the pn junction reaches the third region, a punch-through region is formed in the second region. In this state, when minority carriers are injected from the fourth region into the first region, the minority carriers are absorbed by the second region to constitute the device current.