The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 1992
Filed:
Feb. 26, 1991
Teek F Chong, Yokohama, JP;
Takahiro Ito, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a CMOS semiconductor integrated circuit device, an element isolating insulation film is formed on an N-type epitaxial layer deposited on an N-type semiconductor substrate, and two CMOS circuits are arranged in a region surrounded by the element isolating insulation film. Each of the CMOS circuits includes a P-channel MOS transistor and an N-channel MOS transistor. The source region of the P-channel MOS transistor of one of the CMOS circuits at the final stage is connected to a power source through a first feed path constituted of a metal wiring layer formed on the semiconductor substrate. The source of the P-channel MOS transistor of the other CMOS circuit is connected to the power source through the semiconductor substrate, the epitaxial layer, and an N-type semiconductor region formed on the epitaxial layer.