The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1992
Filed:
Apr. 14, 1989
Larry F Weber, Champaign, IL (US);
Kevin W Warren, Champaign, IL (US);
Mark B Wood, Woods Cross, UT (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
An improved address driver circuit for plasma panels, particularly useful with an independent sustain and address plasma panel. Address pulse generators for one panel address axis are coupled to MOSFET driver devices and provide pulses of a first polarity; and address pulse generators for the other panel address axis are coupled to similar MOSFET driver devices and provide double pulses of a second polarity. With N-channel open-drain MOSFET drivers on both panel address axes, they only need to be designed to pull low. An improved power efficient sustain driver for plasma panels including an inductor through which the panel capacitance is charged and discharged, and switch means switched when the inductor current is zero, which permits recovery of the energy otherwise lost in driving the panel capacitance. An independent sustain and address plasma panel with such energy efficient address drivers and sustain drivers. The energy efficient sustain driver can be used with plasma display panels, electroluminescent panels and with liquid crystal panels having inherent panel capacitance. An independent sustain and address panel with N-channel MOSFET drivers on one address axis and P-channel MOSFET drivers on the other address axis, with an address pulse generator providing pulses of a first polarity to the N-channel MOSFETs, and another address pulse generator providing pulses of a second polarity to the P-channel MOSFETS.