The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1992
Filed:
Jun. 14, 1989
Prahalad Vasudev, Thousand Oaks, CA (US);
Irnee J D'Haenens, Malibu, CA (US);
Other;
Abstract
A semiconductor heterostructure includes separate, device quality regions of gallium arsenide and silicon layers on an insulating substrate such as aluminum oxide or silicon dioxide. The separate regions can be electrically isolated except for intended connections, permitting the fabrication of interrelated gallium arsenide and silicon semiconductor active devices on a single substrate. The device quality gallium arsenide is grown overlying the specially treated device quality silicon layer, by depositing a thin transition layer of gallium arsenide in low temperature growth, annealing it by solid phase epitaxy, and then depositing at a higher temperature a thicker epitaxial layer of gallium arsenide overlying the transition layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile