The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1992
Filed:
Dec. 27, 1990
Applicant:
Inventors:
Emilio E Mendez, Croton-on-Hudson, NY (US);
Doyeol Ahn, Seoul, KR;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 27 ; 372 45 ;
Abstract
A strained-layer quantum well (QW) or multi-quantum well (MQW) semiconductor laser device (10) having a polarization that is switchable between the TE and the TM modes by an electric field that is externally applied, via an electrode (22) perpendicularly to the layer (16) or layers of the quantum well. The polarization switching is a direct consequence of a valence-band reversal induced by the electric field in the strained-layer quantum well. An inversion population is maintained during the switching process, resulting in rapid switching times.