The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1992
Filed:
Dec. 19, 1989
Hiroshi Takagi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device exposed to irradiation (21, 22) of charged particles in a fabrication process thereof includes: at least a first conductive region (3, 1) and a second conductive region (4a, 4b) formed at different positions, electrically insulated from each other; a third coductive region (8 , 9) provided at least over the first conductive region (3, 1) and the second conductive region (4a, 4b); a first insulator layer region (5, 7) sandwiched between the first conductive region (3, 1) and the third conductive region (8, 9) to insulate the first and third conductive regions from each other; and a second insulator layer region (6a, 6b) sandwiched between the second conductive region (4a, 4b) and the third conductive region (8, 9) to insulate the second and third conductive regions from each other, and the second conductive region (4a, 4b) has a portion shaped to cause dielectric breakdown to be more liable to occur in the second insulator layer region (6a, 6b) than in the first insulator layer region (5, 7).