The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1992
Filed:
Jan. 23, 1989
Masato Kawai, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for the production of a semiconductor device in which wiring is formed in three dimensions by the use of interlevel insulators having a flat surface, which method comprises the steps of: applying first insulation material and hardening by heat treatment to form an insulating film made of the first material; etching the insulating film made of the first material in such a manner that only concave portions of an underlying layer are filled with an insulator made of the first material; and forming an insulating film made of a second material thereon, wherein the interlevel insulator is formed by repeating the steps for at least two times so as to have a plurality of the insulators made of the first material which are separated by the insulating films made of the second material.