The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1992
Filed:
Jan. 06, 1989
Applicant:
Inventors:
Satoshi Maeda, Yokohama, JP;
Hiroshi Iwai, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 64 ; 437 89 ; 437 90 ;
Abstract
Element separate regions consisting of insulation material are provided on a semiconductor substrate of a first conductivity type. Element regions which respectively consist of monocrystalline semiconductor layers of the first and second conductivity types are provided in at least two adjacent regions among a plurality of island substrate regions separated by the element separate regions. An impurity layer is provided in that portion between the substrate and at least one of the element regions.
Maeda, Satoshi. (1992). C-mos device and a process for manufacturing the same (U.S. Patent No. 5079183). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5079183
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile