The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1992
Filed:
Apr. 02, 1990
Vida Ilderem, Puyallup, WA (US);
Steven M Leibiger, Graham, WA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A well tap for a field effect device formed using a single polysilicon process and a silicide layer is provided. The polysilicon layer which makes contact to the well is doped the same way as the well but is doped opposite of the source or drain. The silicide layer is formed on the upper and sidewall surfaces of the source or drain, well tap, and gate contacts for a field effect device. The silicide layer extends from the sidewall silicide across the upper surface of the transistors and up to the sidewall oxide of the transistor gates. The structure makes it possible to eliminate laterally-spaced separate well taps used in previous devices. Elimination of the laterally-spaced well taps permits hgher packing density, and lowers buried layer-to-substrate capacitance.