The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1991
Filed:
Jun. 11, 1990
Takashi Yano, Osaka, JP;
Naoyuki Yamabayashi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The present invention relates to an electrode structure formed on a III-V semiconductor element and a method for manufacturing the same. One object of the invention is to provide an electrode which exibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, while still being easy to process in to desired shapes. The electrode structure is formed by annealing the structure after the formation of a laminated structure having an ohmic layer including at least nickel formed on the III-V compound semiconductor element, a bonding layer to be connected to a bonding wire, a stopper layer provided between the ohmic layer and the bonding layer, and an isolation layer provided between the stopper layer and the ohmic layer.